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BUL741 - The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s High voltage fast-switching NPN Power Transistor

BUL741_4100688.PDF Datasheet

 
Part No. BUL741
Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor

File Size 298.02K  /  10 Page  

Maker


ST Microelectronics, Inc.
STMicroelectronics



JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: BUL742C
Maker: ST
Pack: TO 220..
Stock: Reserved
Unit price for :
    50: $0.43
  100: $0.41
1000: $0.39

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 Full text search : The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s High voltage fast-switching NPN Power Transistor
 Product Description search : The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s High voltage fast-switching NPN Power Transistor


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