| PART |
Description |
Maker |
| WV3EG264M64EFSU335D4-MG |
1GB- 2x64Mx64 DDR SDRAM UNBUFFERED, w/PLL 1GB 2x64Mx64 DDR SDRAM的缓冲，瓦特/锁相
|
Supertex, Inc.
|
| W3DG64126V-D2 |
1GB - 2x64Mx64, SDRAM UNBUFFERED
|
http://
|
| WV3HG264M64EEU806D6MG WV3HG264M64EEU806D6SG WV3HG2 |
1GB - 2x64Mx64 DDR2 SDRAM UNBUFFERED
|
White Electronic Design...
|
| ST62P20CM3/XXX ST62P10CM6/XXX ST62P10CM1/XXX ST62P |
8-BIT MICROCONTROLLER
IC, SDRAM, DDR400, 16MEGX16
1GB DDR SDRAM SODIMM 8位微控制
|
Exar, Corp.
|
| W3EG72125S335AJD3 W3EG72125S202JD3 W3EG72125S263AJ |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Amphenol, Corp.
Toshiba, Corp.
|
| HYMD512M646BLFS8-D43 HYMD512M646BLFS8-M |
DDR SDRAM - SO DIMM 1GB
|
Hynix Semiconductor
|
| HYMD512M646ALFS8-H HYMD512M646ALFS8-J HYMD512M646A |
DDR SDRAM - SO DIMM 1GB
|
Hynix Semiconductor
|
| K4H1G0838M-TC_LB3 K4H1G0438M K4H1G0438M-TC_LA2 K4H |
1Gb M-die DDR SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYMD512G726BLF4N-J HYMD512G726BLF4N-D43 |
DDR SDRAM - Registered DIMM 1GB
|
Hynix Semiconductor
|
| EBD11UD8ABFB-7B EBD11UD8ABFB EBD11UD8ABFB-6B EBD11 |
1GB Unbuffered DDR SDRAM DIMM
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| K4H1G0738C-UC_LB0 K4H1G0638C K4H1G0638C-UC_LA2 K4H |
Stacked 1Gb C-die DDR SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
