| PART |
Description |
Maker |
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| PD488588FF-C80-40-DH1 |
288M bits Direct Rambus DRAM for High Performance Solution
|
Elpida Memory, Inc.
|
| V53C404 |
High Performance / Low Power 1M x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| GAL16V8D-20QPI GAL16V8D-20QJI GAL16V8D-7LP GAL16V8 |
Aluminum Snap-In Capacitor; Capacitance: 2700uF; Voltage: 160V; Case Size: 30x50 mm; Packaging: Bulk
High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PQCC20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 3.5 ns, PQCC20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDSO20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PQCC20
IC,MICROCONTROLLER,8-BIT,68HC08 CPU,CMOS,DIP,8PIN,PLASTIC RoHS Compliant: No
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| ATF22V10C ATF22V10C-10JC ATF22V10C-10JI ATF22V10C- |
High Performance E2 PLD FLASH PLD, 10 ns, PDIP24
Quad Flow through Driver FLASH PLD, 10 ns, PDSO24
High Performance E2 PLD FLASH PLD, 5 ns, PQCC28
High Performance E2 PLD E2类高性能可编程逻辑器件
High Performance E2 PLD FLASH PLD, 7.5 ns, PQCC28
LVDS Dual 2x2 Bi-Directional Crosspoint/Repeater
|
ATM Electronic, Corp.
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| MT4LD164G-7BN MT4LD164G-6BN MT4LD164G-5BN MT4LDT16 |
x64 Burst EDO Page Mode DRAM Module X64的脉冲EDO页面模式内存模块
|
Cypress Semiconductor, Corp.
|
| V53C104D V53C104DP60L V53C104DP70 V53C104DP70L V53 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| V53C104F V53C104FP60L V53C104FP70 V53C104FK60 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
http://
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| M4A3-512_256-10FAC M4A5-96/48-10VC M4A5-96/48-10VI |
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 5.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 10 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP144
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP48
CONNECTOR ACCESSORY
CAP 1500UF 100V ELECT KMH SNAP
High Performance E 2 CMOS In-System Programmable Logic
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| GAL16V8A GAL16V8B GAL16V8A-15LPI GAL16V8A-10LJI GA |
HIGH PERFORMANCE E2CMOS PLD EE PLD, 15 ns, PDIP20
HIGH PERFORMANCE E2CMOS PLD EE PLD, 10 ns, PQCC20
HIGH PERFORMANCE E2CMOS PLD EE PLD, 25 ns, PQCC20
HIGH PERFORMANCE E2CMOS PLD EE PLD, 10 ns, PDIP20
HIGH PERFORMANCE E2CMOS PLD E2CMOS的高性能可编程逻辑器件
16 BIT MCU, 32K FLASH
HIGH PERFORMANCE E2CMOS PLD
|
http://
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| UPD42S17170LLE-A70 UPD42S17170LG5-A70-7KF UPD42S17 |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
