| PART |
Description |
Maker |
| EMA6DXV5T5 EMA6DXV5T1 EMA6DXV5T1/D |
Dual Common Emitter Bipolar Resistor Transistor
Improved Industry-Standard Single-Ended PWM Controller; Temperature Range: -40°C to 85°C; Package: 8-MSOP
Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ON Semiconductor
http://
|
| MDC03 |
Common Emitter Transistor Array - 3 each PNP and NPN
|
ROHM
|
| AT-38086-TR1 AT-38086-BLK AT-38086 |
4.8 V NPN Silicon Bipolar Common Emitter Transistor
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| 1314AB60 |
60 W, 25 V, 1350-1400 MHz common emitter transistor
|
GHz Technology
|
| 1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
Micrel Semiconductor, Inc.
|
| 1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
LEM
|
| TD62504FN TD62502FN TD62503FN E005668 |
From old datasheet system
7ch SINGLE DRIVER : COMMON EMITTER
7ch SINGLE DRIVER(COMMON EMITTER) 7通道单一驱动程序（共发射极）
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| MS1007 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor
0.5 Watts, 20 Volts, Class A Linear to 2300 MHz
|
GHZTECH[GHz Technology]
|
| UA11J UA11JG-AL5-R UA11J-15 |
EMITTER COMMON DUAL DIGITAL TRANSISTORS)
|
Unisonic Technologies
|
