| PART |
Description |
Maker |
| 2SA1201 |
High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semiconductor Co., Ltd
|
| 2SD2211 |
High breakdown voltage Low collector output capacitance High transition frequency
|
TY Semiconductor Co., L...
|
| 2SC4132 |
High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz)
|
TY Semiconductor Co., Ltd
|
| 2SC2404 |
Optimum for RF amplification of FM/AM radios High transition frequency fT
|
TY Semiconductor Co., Ltd
|
| 2SC3547B |
Transition frequency is high and dependent on current excellently.
|
TY Semiconductor Co., Ltd
|
| MAX8625A09 |
High-Efficiency, Seamless Transition, Step-Up/Down DC-DC Converter
|
Maxim Integrated Products
|
| AN667 |
DESIGNING A HIGH POWER FACTOR SWITCHING PREREGULATOR WITH THE L6560/A TRANSITION MODE I.C.
|
ST Microelectronics
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| 15GN01SA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications
|
TOSHIBA
|
