| PART |
Description |
Maker |
| TLP1025 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba
|
| TLP1023 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba
|
| TLP1017 TLP1016 E006222 |
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC From old datasheet system
|
Toshiba Semiconductor
|
| TLP1015 TLP1014 E006221 P1015 P1014 |
3 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH LOGIC OUTPUT From old datasheet system TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC 东芝光电断路器红外LED相机芯片
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|
| TLP818 |
PHOTO-INTERRUPTER INFRARED LED PHOTOTRANSISTOR TOSHIBA PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
| RPI-221 |
Sensors > Photointerrupters > Linear Phototransistor output Photointerrupter, double-layer mold type Photointerrupter/ double-layer mold type
|
Rohm CO.,LTD.
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| SE1470 SE1470-003L |
1.57 mm, 1 ELEMENT, INFRARED LED, 880 nm AlGaAs Infrared Emitting Diode
|
Honeywell Accelerometers
|
| F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
| OP168F OP268FB OP268FPS OP268FA OP268FC OP269A OP2 |
Plastic Infrared Emitting Diode 0.76 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
TT electronics OPTEK Technology OPTEK TECHNOLOGY INC
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp. KINGBRIGHT[Kingbright Corporation]
|
| LED55CB |
GaAs Infrared Emitting Diode; Package: TO-46; No of Pins: 2; Container: Bulk 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|