PART |
Description |
Maker |
LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
LN59-LNA2702L LNA2702L LN59 |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp. Panasonic Corporation Panasonic Semiconductor
|
TLP813 |
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
TLN105B07 TLN105BF |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Corporation Toshiba Semiconductor
|
TLN110 |
INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
TLP818 |
PHOTO-INTERRUPTER INFRARED LED PHOTOTRANSISTOR TOSHIBA PHOTO INTERRUPTER INFRARED LED PHOTOTRANSISTOR PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR
|
TOSHIBA[Toshiba Semiconductor]
|
L643706 L6437-01 |
Infrared LED High radiant output GaAs LED with position reference hole
|
Hamamatsu Corporation
|
SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package From old datasheet system
|
Siemens Semiconductor G... SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TLP291-4 |
Photocouplers GaAs Infrared LED & Photo Transistor
|
Toshiba
|
MIE-134G2 134G2 |
Infrared Emitting Diodes (IRED) GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
TLOE157AP TLYE157AP TLRE157AP TLSE157P |
TOSHIBA T-1 3/4 InGaAIP Ultra Bright LED Toshiba TLxE157 Series LEDs
|
Marktech Optoelectronics MARKTECH[Marktech Corporate]
|