| PART |
Description |
Maker |
| TGF4250-SCC |
DC - 10.5 GHz Discrete HFET
|
TRIQUINT[TriQuint Semiconductor]
|
| FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PC |
1/2 - Watt HFET
|
WJ Communication. Inc.
|
| FP1189-PCB-900 FP1189-PCB-1900 |
1/2 watt HFET
|
WJ Communications
|
| SHF-0189 |
0.05-6 Ghz, 0.5 Watt GAAS HFET
|
SIRENZA
|
| SHF-0289 |
DC-3 GHz 1.0 Watt GaAs HFET
DC-3 GHz, 1.0 Watt GaAs HFET
DC-3 GHz/ 1.0 Watt GaAs HFET
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| XP1048-QJ |
3.3-3.8 GHz HFET 3W Linear Power Amplifier
|
Mimix Broadband
|
| NE3508M04-T2B-A |
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET LEAD FREE, THIN, SUPER MINIMOLD PACKAGE-4
|
California Eastern Laboratories, Inc.
|
| NE3508M04-T2-A |
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET LEAD FREE, SUPER MINIMOLD, M04, 4 PIN
|
California Eastern Laboratories, Inc.
|
| HI1-0507A2 HI1-0506A5 HI1-0507A5 HI1-0506A2 HI3-05 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0402-5 90; Contact Mating Area Plating: Tin
Interface IC 接口IC
|
Intersil, Corp.
|
| 2SJ221 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type
Silicon P-Channel MOS FET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| CGD942C |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| 2SJ208 2SJ208-T2 2SJ208-T1 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0502-8 00; No. of Positions: 6; Connector Type: Wire
P-CHANNEL MOS FET FOR SWITCHING
|
NEC Corp.
NEC[NEC]
|
