| PART |
Description |
Maker |
| TGF2022-60 |
DC - 20 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF4230-SCC |
DC - 12 GHz Discrete HFET
|
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| MRF4427 MRF4427R1 MRF4427R2 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Yageo, Corp.
Microsemi Corporation
|
| 2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board
SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| OM5236ST OM5241ST OM5240ST OM5238ST OM5237ST OM523 |
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
150V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package
150V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
100V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
SINGLE ISOLATED RECTIFIER IN HERMETIC
200V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
International Rectifier
List of Unclassifed Manufacturers
ETC[ETC]
|
| 10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
1000V 1A Ultra-Fast Discrete Diode in a SMB package
100V 1A Ultra-Fast Discrete Diode in a SMB package
200V 1A Ultra-Fast Discrete Diode in a SMB package
400V 1A Ultra-Fast Discrete Diode in a SMB package
600V 1A Ultra-Fast Discrete Diode in a SMB package
800V 1A Ultra-Fast Discrete Diode in a SMB package
|
Vishay Semiconductors
International Rectifier, Corp.
IRF[International Rectifier]
|
| 2SJ602 2SJ602-S 2SJ602-ZJ 2SJ602-Z |
MOS FIELD EFFECT TRANSISTOR
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0632-3 00; No. of Positions: 30; Connector Type
Pch power MOSFET 60V RDS(on)MAX=73m ohm TO-220AB,TO-262,TO-263
|
NEC Corp.
|
| BFY196 |
From old datasheet system
HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise, high gain amplifiers up to 2 GHz.)
|
SIEMENS[Siemens Semiconductor Group]
|
| 1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies
UHV240-KH/AS
PTSA 0.5/ 9-2.5-Z
Discrete POWER & Signal Technologies 分立功率
1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器（功500瓦的瞬变电压抑制器）
1500 Watt Transient Voltage Suppressors(???500???????靛??????
Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
http://
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 8TQ080S 8TQ100S 8TQ 8TQ10 8TQ100STRR 8TQ080STRR |
16 A SPDT MINIATURE POWER RELAY
SCHOTTKY RECTIFIER
100V 8A Schottky Discrete Diode in a D2-Pak package
80V 8A Schottky Discrete Diode in a D2-Pak package
|
IRF[International Rectifier]
|
| AGR18125E AGR18125EF AGR18125EU |
125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
