| PART |
Description |
Maker |
| TGF1350-SCC TGF1350 |
Discrete MESFET
|
TRIQUINT[TriQuint Semiconductor]
|
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET
200 mA, 2 W, K-band power GaAs MESFET
400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging
10-Bit D-Type Latch
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器
8-Bit D-Type Latch 8位D型锁存器
|
Bourns, Inc.
|
| OM5236ST OM5241ST OM5240ST OM5238ST OM5237ST OM523 |
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package
400V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
150V 10A Hi-Rel Ultra-Fast Discrete Diode in a TO-257AA package
150V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
100V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
SINGLE ISOLATED RECTIFIER IN HERMETIC
200V 10A Hi-Rel Ultra-Fast Discrete Diode in a D2 package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
International Rectifier
List of Unclassifed Manufacturers
ETC[ETC]
|
| HI3-0201HS4 HI3-0201HS5 HI1-0201HS2 HI1-0201HS5 HI |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0414-4 90; Contact Mating Area Plating: Tin
Interface IC 接口IC
|
Intersil, Corp.
|
| 2SJ221 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type
Silicon P-Channel MOS FET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| CRF24010 |
10 W, SiC RF Power MESFET
|
CREE[Cree, Inc]
|
| CRF24060 |
60 W, SiC RF Power MESFET
|
CREE[Cree, Inc]
|
| CRF24010D |
10 W SiC RF Power MESFET Die
|
CREE[Cree, Inc]
|
|
