| PART |
Description |
Maker |
| NE6500379A-T1 |
3W L / S-BAND POWER GaAs MESFET
3W L, S-BAND POWER GaAs MESFET 3W升，S波段功率GaAs MESFET
|
NEC Corp.
NEC, Corp.
|
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
|
INFINEON[Infineon Technologies AG]
|
| NEZ1011-2E NEZ1414-2E |
2W X, Ku-BAND POWER GaAs MESFET 2W的第十个Ku波段功率GaAs MESFET
2W X / Ku-BAND POWER GaAs MESFET
2W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| HI1-0507A2 HI1-0506A5 HI1-0507A5 HI1-0506A2 HI3-05 |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0402-5 90; Contact Mating Area Plating: Tin
Interface IC 接口IC
|
Intersil, Corp.
|
| MGF1951A-01 MGF1951A 1951A |
Medium Power Microwave MESFET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE72218 NE72218-T1 |
C TO X BAND N-CHANNEL GaAs MESFET
|
California Eastern Labs
|
| NE-720 |
General Purpose GaAs MESFET
|
NEC
General Purpose GaAs MESFET
|
| LMA116 |
2-10GHz MESFET Amplifier 2 - 10GHz的场效应管放大器
|
United Monolithic Semiconductors GmbH
FILTRONIC[Filtronic Compound Semiconductors]
|
| NEZ1011-4E NEZ1414-4E |
4W X, Ku-BAND POWER GaAs MESFET
|
NEC
|
| NE650049600 |
L&S BAND MEDIUM POWER GaAs MESFET
|
NEC
|
