| PART |
Description |
Maker |
| TC55NEM208AFTN70 TC55NEM208A TC55NEM208AFPN TC55NE |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TH58100FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVB160A TC58FVB160AXB TC58FVB160AXB-10 TC58FVB |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55V2325FF TC55V2325FF-100 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55NEM216ASTV55 TC55NEM216ASTV70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55VEM208ASTN55 TC55VEM208ASTN40 TOSHIBACORPORATI |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
524,288-WORD BY 8-BIT STATIC RAM
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| TC55V4366FF-150 TC55V4366FF-133 TC55V4366FF-167 |
131,072-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Semiconductor
Toshiba Corporation
Toshiba, Corp.
|
| MP6404 |
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| TPCP8002 |
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCF8304 |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
