| PART |
Description |
Maker |
| SY10422-7 SY100101422-3FCF SY100101422-3MCF SY1001 |
256 x 4 ECL RAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| UPB100422D-10 UPB100422B-10 |
256 x 4-bit 100K ECL RAM. Access time(max) 10 ns.
|
NEC
|
| P93U422-35FMB P93U422-35PMB P93U422-35SMB |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor, Corp.
Microchip Technology, Inc.
|
| CAT22C10 22C10 CAT22C10P-30TE13 CAT22C10J-20TE13 C |
256-Bit Nonvolatile CMOS Static RAM
256-Bit Nonvolatile CMOS Static RAM 256位非易失性的CMOS静态RAM
256-BitNonvolatileCMOSStaticRAM
|
CatalystSemiconductor
CATALYST[Catalyst Semiconductor]
|
| MC100EP016 MC100EP445FAR2 MC10H424FN MC100EP016A M |
3.3V / 5V ECL 8-Bit Synchronous Binary Up Counter
3.3V / 5VECL 8-Bit Serial/Parallel Converter
Quad TTL-ECL Translator
5V ECL 6-Bit 2:1 Mux Latch
4-Wide OR-AND/OR-ANDbar Gate
Quad 2-Input AND Gate
3.3V / 5V ECL ÷2 Divider
3.3V / 5V ECL Quad 2-Input Differential AND/NAND
5V ECL Quad 4-Input OR/NOR Gate
|
ON Semiconductor
|
| IDT72V8980 IDT72V8980DB IDT72V8980J IDT72V8980PV I |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
256 x 256 TSI, 8 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
256k x 16 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| ECLSOIC8EVB NB6L16D MC100EL01D MC100EL04D MC100EL0 |
3.3V / 5V ECL JK Flip Flop
5V ECL 2-Input XOR/XNOR
5V ECL Divide by 2 Divider
Evaluation Board Manual for High Frequency SOIC 8
|
ONSEMI[ON Semiconductor]
|
| IDT70T3589S-200DRI IDT70T3589S-133BF IDT70T3589S-1 |
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 2.5V56/128/64K × 36 SYNCHRONOU S双，端口静态RAM.5V的接
HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 64K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
|
Integrated Device Technology, Inc.
|
| UPB100474ABH-6 UPB100474AD-5 |
1,024 x 4-bit 100K ECL RAM. Access time(max) 6 ns.
1,024 x 4-bit 100K ECL RAM. Access time(max) 5 ns.
|
NEC
|
| CY62256EV18 CY62256EV18LL-70SNXI CY62256EV18LL-70S |
256-Kbit (32 K 8) Static RAM
256-Kbit (32 K × 8) Static RAM
|
Cypress Semiconductor
|
