| PART |
Description |
Maker |
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SUP75N06-07L SUB75N06-07L |
N-Channel 60-V (D-S) 175C MOSFET N通道60 - V（下局副局长）175C MOSFET
N-Channel MOSFET
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| 2SJ56709 2SJ567 2SJ5672-7J1B |
2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
|
Toshiba Semiconductor
|
| SI9948AEY |
P-Channel Enhancement-Mode MOSFET Dual
Dual P-Channel 60-V (D-S), 175C MOSFET
Dual P-Channel 60-V (D-S), 175C MOSFET
Dual P-Channel 60-V (D-S)/ 175C MOSFET
|
Vishay Siliconix
Fairchild Semiconductor
|
| 2SK3211 2SK3211L-E 2SK3211STL-E |
25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK2006DPE-TL-E RJK2006DPF RJK2006DPJ |
Silicon N Channel MOS FET High Speed Power Switching
40 A, 200 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET LDPAK-3
|
Renesas Electronics Corporation
Glenair, Inc.
|
| SI4946EY SI4946EY-T1 |
Dual N-Channel 60-V (D-S) , 175C MOSFET
Dual N-Channel 60-V (D-S), 175C MOSFET
Dual N-Channel 60-V (D-S), 175C MOSFET
Dual N-Channel 60-V (D-S)/ 175C MOSFET
|
VISAY[Vishay Siliconix]
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| SUM110N05-06L |
N-Channel 55-V (D-S) 175C MOSFET
|
VISHAY
|
| SUM70N03-09CP |
N-Channel 30-V (D-S), 175C MOSFET
|
Vishay
|
| SUP85N04-03 SUB85N04-03 |
N-Channel 40-V (D-S) 175C MOSFET
|
VISAY[Vishay Siliconix]
|
