| PART |
Description |
Maker |
| SBTC-2-10-75_75L SBTC-2-10-75 SBTC-2-10-75L SBTC-2 |
Power Splitter/Combiners 2 Way-0??75蟹 10 to 1000 MHz
Power Splitter/Combiners 2 Way-075з 10 to 1000 MHz 功分合路2路，0Σ75з101000兆赫
Power Splitter/Combiners 2 Way-0° 75 10 to 1000 MHz
Power Splitter/Combiners 2 Way-0∑ 75з 10 to 1000 MHz
Power Splitter/Combiners 2 Way-0 75 10 to 1000 MHz
|
MINI[Mini-Circuits]
|
| SBTC-2-25_25L SBTC-2-25 SBTC-2-25L SBTC-2-2525L |
Power Splitter/Combiners 2 Way-050з 1000 to 2500 MHz 1000 MHz - 2500 MHz RF/MICROWAVE COMBINER, 2.5 dB INSERTION LOSS
Power Splitter/Combiners 2 Way-0° 50?/a> 1000 to 2500 MHz
Power Splitter/Combiners 2 Way-0° 50 1000 to 2500 MHz
Power Splitter/Combiners 2 Way-0∑ 50з 1000 to 2500 MHz
Power Splitter/Combiners 2 Way-0 50 1000 to 2500 MHz
|
MINI[Mini-Circuits]
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| APT10078SLL APT10078BLL APT10078BLL_04 APT10078BLL |
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
14 A, 1000 V, 0.78 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| MAPD-009673-C2DA40 |
5 MHz - 1000 MHz RF/MICROWAVE SPLITTER, 2.2 dB INSERTION LOSS ROHS COMPLIANT, SM-150, 6 PIN
2 Way Power Divider 5 to 1000 MHz
|
M/A-COM Technology Solutions, Inc.
|
| HER507 HER504 HER505 HER508 HER502 HER503 HER501 H |
5.0 Amp High Efficient Rectiffiers 50 to 1000 Volts 5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
| S558-5999-Q2 |
Xfmr Module 1000 Mbps DATACOM TRANSFORMER FOR 10/100/1000 BASE-T; ETHERNET APPLICATION(S)
|
Bel Fuse, Inc.
|
| MJE18002 MJF18002 ON2019 |
From old datasheet system
Switching Power Supply Applications
POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 AND 50 WATTS
|
Motorola, Inc.
ON Semiconductor
|
| STD2NK100Z STU2NK100Z STP2NK100Z |
N-channel 1000 V, 6.25 Ohm, 1.85 A, DPAK Zener-protected SuperMESH(TM) Power MOSFET
N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
