| PART |
Description |
Maker |
| STW47NM60 |
N-CHANNEL 600V - 0.075ohm - 47A TO-247 MDmesh?Power MOSFET
N-CHANNEL 600V - 0.075ohm - 47A TO-247 MDmesh⑩Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRFP250N IRFP250 |
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
N-Channel(Hexfet Transistors)
Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A)
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET（减振钢板基本\u003d 200第五的Rdson）\u003d 0.075ohm，身份证\u003d 30A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET
600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
600V N-Channel B-FET / Substitute of SSU2N60A
600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FQT1N60C FQT1N60CTF-WS |
N-Channel QFETMOSFET 600V, 0.2A, 11.5
N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
|
Fairchild Semiconductor
|
| FQU5N60C FQD5N60C FQD5N60CTM FQD5N60CTF FQU5N60CTU |
600V N-Channel Advance QFET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI8N60C FQB8N60C FQB8N60CTM |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STW16NB60 |
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMeshMOSFET N沟道600V 0.3ohm - 16A条，247 PowerMesh⑩MOSFET
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh⑩ MOSFET
N-CHANNEL 600V 0.3 OHM 16A TO-247 POWERMESH MOSFET
N-CHANNEL 600V - 0.3ohm - 16A TO-247 PowerMesh MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| HGTG30N60B3D |
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体 60 A, 600 V, N-CHANNEL IGBT, TO-247
|
Intersil, Corp.
|
| FQB12N60 FQI12N60 FQB12N60TMAM002 FQI12N60TU |
600V N-Channel QFET
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| SSW10N60B SSI10N60B SSI10N60BTU SSW10N60BTM |
600V N-Channel B-FET
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
