| PART |
Description |
Maker |
| MF1043S-1 |
FOR GSM MOBILE TELEPHONE / Rx
FOR GSM MOBILE TELEPHONE, Rx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MF1172V-1 MF1172-V-1 |
FOR GSM MOBILE TELEPHONE, Rx
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MF1090V-3 |
FOR E-GSM MOBILE TELEPHONE, Rx 对于电子的GSM移动电话，接
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CGY59 Q68000-A8887 |
GaAs MMIC (Low noise preamplifier for mobile communication PCN DECT GSM in 2.7V to 6V systems)
From old datasheet system
GaAs MMIC (Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AP137-501 |
Quad-Band GSM Power Amplifier Module
|
Skyworks Solutions Inc.
|
| AWT6168R |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS
|
| TQM7M5005H |
GSM/EDGE Multi-mode Power Amplifier Module
|
TriQuint Semiconductor
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| PF01411 PF01411A |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| AWE6159R AWE6159RM46P8 AWE6159RM46P9 |
Quad-band GSM/GPRS/EDGE Power Amplifier Module
|
ANADIGICS, Inc
|
| SKY77336 |
Power Amplifier Module for Quad-Band GSM/GPRS/EDGE
|
Skyworks Solutions Inc.
|
| PF01410 PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
