| PART |
Description |
Maker |
| SHB636053E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE 5 A, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
Sensitron Semiconductor
|
| SSR24C50CT SSR24C50CTG SSR24C50CTGTX SSR24C50CTGTX |
24 AMP 600 VOLTS SCHOTTKY SILICON CARBIDE CENTER TAP RECTIFIER
|
ETC
|
| SSR24C60CT SSR24C60CTS.5TXV SSR24C50 SSR24C50CTS.5 |
24 AMP 600 VOLTS SCHOTTKY SILICON CARBIDE CENTER TAP RECTIFIER 24放大00伏碳化硅肖特基整流技术咨询中
From old datasheet system
|
Electronic Theatre Controls, Inc.
ETC[ETC]
SSDI[Solid States Devices, Inc]
List of Unclassifed Manufacturers
|
| SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| UPSC600 UPSC200 UPSC400 |
Silicon Carbide Schottky Rectifiers
Silicon Carbide (SiC) Schottky
|
MICROSEMI[Microsemi Corporation]
|
| SIDC16D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| Q67040-S4374 SDB20S30 Q67040-S4419 SDP20S30 SDB20S |
Silicon Carbide Schottky Diodes - 2x10A diode in TO263 package
Silicon Carbide Schottky Diodes - 2x10A diode in TO220-3 package
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| GA20JT06-CAL-15 |
Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA50JT12-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| GA50JT17-CAL |
Normally ?OFF Silicon Carbide Junction Transistor
|
GeneSiC Semiconductor, ...
|
| C2D20120 C2D20120D |
Silicon Carbide Schottky Diode
|
List of Unclassifed Manufacturers
ETC
|
