PART |
Description |
Maker |
SMF-06020 |
Power Optimized GaAs FET
|
SAMSUNG[Samsung semiconductor]
|
NE8500100 NE8500100-RG NE8500100-WB NE500100 NE500 |
1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
MGF0905A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L /S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
MGF0907 MGF0907B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC] ETC
|
NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管 0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp. NEC[NEC]
|
SI4884DY |
Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET 0.01 ohm, Si, POWER, FET Single N-Channel Logic Level PWM Optimized PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
CFH2162-P5 |
Power GaAs FET
|
Mimix Broadband
|
TIM1011-4L |
MICROWAVE POWER GaAs FET
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
MGF2415A1 MGF2415A |
MICROWAVE POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGF2430A1 MGF2430A |
MICROWAVE POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|