| PART |
Description |
Maker |
| BAC40C-806-01 BAC40C-806-02 |
40W 806nm 30% Fill Factor High Power Laser Diode Bar on Microchannel Cooler
|
Bookham, Inc.
|
| SPC40C-980-01 SPC30C-980-01 |
40W / 30W 980nm High Brightness Single-Mode Laser Diode Bar on Passive Cu Block Cooler
|
Bookham, Inc.
|
| SLD433S4 |
60W Array Laser Diode
|
Sony Corporation
|
| Q62702-P358 Q62702-P1617 SPL_CG SPLCG85 SPLCG98 SP |
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 850 nm, LASER DIODE
Laser Diode on Submount 1.0 W cw Class 4 Laser Product 激光二极管W连续类激光产品的Submount 1.0
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| AS081Q3000W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS081C320W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7537BF-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
