| PART |
Description |
Maker |
| SLD432S |
Ultrahigh Power Infrared Array Laser Diode Achieves 40 W Optical Power Output
|
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| FAT-870-40 |
INFRARED HIGH POWER LED ARRAY
|
Roithner LaserTechnik GmbH
|
| ICX659ALA ICX658AKA ICX658ALA ICX659AKA |
New Generation EXview HAD CCD Ultrahigh-Sensitivity Near Infrared Structure
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
|
| AS098Q1200W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| S098Q300W AS098Q300W |
High Power Stacked Infrared Laser Diode Array
|
Rochester Electronics
|
| AS081C100W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
| AD668 AD668JQ AD668S |
12-Bit Ultrahigh Speed Multiplying D/A Converter 12位超高速乘法D / A转换
12-Bit Ultrahigh Speed Multiplying D/A Converter PARALLEL, WORD INPUT LOADING, 0.12 us SETTLING TIME, 12-BIT DAC, CDIP24
|
Analog Devices, Inc.
|
| 2SC5303 |
25 A, 800 V, NPN, Si, POWER TRANSISTOR
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
|
Sanyo Semicon Device
|
| 2SK3491 2SK3491TP-FA |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Ultrahigh-Speed Switching Applications
|
Sanyo Semicon Device
|
| LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
