| PART |
Description |
Maker |
| SLD231VL |
Index-Guided High Power AlGaAs Laser Diode
|
SONY[Sony Corporation]
|
| SLD114VS |
Index-Guided AlGaAs Laser Diode
|
SONY[Sony Corporation]
|
| SLD1137VL |
650nm Index-Guided Red Laser Diode
|
SONY
|
| SLD1133VL |
650nm Index-Guided Red Laser Diode
|
SONY[Sony Corporation]
|
| SLD1133VS |
650nm Index-Guided Red Laser Diode
|
SONY[Sony Corporation]
|
| RLT80810MG RLT808-10MG |
ABSOLUTE MAXIMUM RATINGS
index guided mqw structure
|
Roithner LaserTechnik GmbH
Roithner LaserTechnik G...
|
| HL6712G |
From old datasheet system
0.67 um band AlGaInP index-guided laser diode with a double heterostructure
|
Hitachi Semiconductor
|
| DL-3147-041 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
| DL-3147-261 DL-3147-161 |
Red Laser Diode Index Guided AlGaInP Laser Diode
70
|
Sanyo Semiconductor
|
| HSDL-4260 |
High-Power T-1篓煤 (5mm) AlGaAs Infrared (875nm) Lamp
High-Power T-1? (5mm) AlGaAs Infrared (875nm) Lamp
|
Lite-On Technology Corporation
|
