| PART |
Description |
Maker |
| SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
|
sirenza.com
SIRENZA MICRODEVICES
|
| 0809LD30 |
Compant High-Insulation Power Relay, Polarized, 10A 30瓦，28V的，1 GHz的LDMOS的场效应
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦，28V的，1 GHz的LDMOS的场效应
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 0809LD60 |
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT 28V 1 GHz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 0809LD120 |
120 Watt / 28V / 1 Ghz LDMOS FET
120 WATT 28V 1 GHz LDMOS FET
120 WATT, 28V, 1 GHz LDMOS FET
|
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-02 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| HN2E04F |
Multi-chip discrete device (PNP SW diode)
|
TOSHIBA
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
