| PART |
Description |
Maker |
| SIGC156T60SNR2C |
IGBT Chip in NPT-technology 600V NPT technology 100μm chip
|
Infineon Technologies AG
|
| HGTP10N120BN HGTG10N120BN HGT1S10N120BNS HGT1S10N1 |
1200V, NPT Series N-Channel IGBT; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel 35 A, 1200 V, N-CHANNEL IGBT, TO-263AB
35A/ 1200V/ NPT Series N-Channel IGBT
35A, 1200V, NPT Series N-Channel IGBT
35 A, 1200 V, NPT N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SGB15N60HS Q67040-S4535 |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| APT20GS60KR APT20GS60KRG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
| SKW30N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SKB15N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
|
SIEMENS AG
|
| SIGC16T120C Q67041-A4673-A003 |
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| Q67041-A4696-A001 |
IGBT Chip in NPT-technology
|
Infineon Technologies AG
|
| SIGC42T120CS Q67050-A4048-A001 |
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| C67078-A4675-A001 C67078-A4675-A002 SIGC42T120CL |
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SIGC185T170R2C Q67041-A4697-A001 |
IGBT Chip in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
