| PART |
Description |
Maker |
| BUZ111SL Q67040-S4003-A2 BUZ111 |
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
|
SIEMENS[Siemens Semiconductor Group]
|
| IRFV460 IRFV460-15 |
Simple Drive Requirements
REPETITIVE AVALANCHE RATED AND dv/dt RATED
500V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
|
International Rectifier
|
| BSP170P Q67041-S4018 |
SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) 1.9 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
High Speed CMOS 8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125
SIPMOS ? Power Transistor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BUZ342 C67078-S3135-A2 |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 60 A, 50 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Ultra low on-resistance) SIPMOS功率晶体管（N通道增强模式雪崩级的dv /额定的胸苷超低电阻）
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BUZ102SL Q67040-S4010-A2 |
SIPMOS ? Power Transistor
High Speed CMOS Logic 12-Stage Binary Counter 16-PDIP -55 to 125 SIPMOS功率晶体管（N通道增强模式的逻辑电平雪崩额定dv / dt的评价）
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) 47 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
SIEMENS A G
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
NEC[NEC]
|
| IRFAG40 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
|
International Rectifier
|
| BSS192 |
P-channel vertical D-MOS intermediate level FET P沟道垂直 D-MOS 中间级场效应
N-channel TrenchMOS TM transistor
|
NXP Semiconductors N.V.
Philips
|
| 2SK3576 2SK3576-T1B 2SK3576-T2B |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| UPA505T PA505T G11241EJ1V0DS00 |
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS
|
NEC[NEC]
|
| UPA653TT UPA653TT-E1 UPA653TT-E2 |
P-channel enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
