| PART |
Description |
Maker |
| SSP4N60AS SSP4N60ASJ69Z |
4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
Advanced Power MOFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| SFW12955 SFW2955 |
Advenced Power MOSFET 9.4 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF2204PBF IRF2204PBF-15 |
75 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
HEXFET? Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| IRFM220A |
N-Channel Power MOSFET(N娌??澧?己?????OS?烘?搴??锛??婧????负200V锛??????讳负0.8惟锛???垫?涓?.13A锛?
Advanced Power MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF1010NLPBF IRF1010NSPBF IRF1010NSTRRPBF IRF1010N |
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Advanced Process Technology
|
International Rectifier
|
| SFS9540 |
Advanced Power MOSFET 10.7 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFI1310NPBF IRFI1310NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRL630A IRL630ANL |
200V N-Channel Logic Level A-FET / Substitute of IRL630 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFP150 IRFP150A IRFP150ANL |
N-CHANNEL POWER MOSFET
Advanced Power MOSFET
100V N-Channel A-FET / Substitute of IRFP150
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| IRLWI620A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
