| PART |
Description |
Maker |
| R6200230 R6202250 R6201050 R6201850 R6201040 R6200 |
500 A, 400 V, SILICON, RECTIFIER DIODE
General Purpose Rectifier (300-500 Amperes Average 2400 Volts) 通用整流器（300-500安培平均2400伏特
300 A, 2200 V, SILICON, RECTIFIER DIODE HERMETIC SEALED PACKAGE-2
300 A, 1200 V, SILICON, RECTIFIER DIODE
300 A, 200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX INC
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| SFF40N30P SFF40N30N |
40 AMPS 300 VOLTS 0.10 OHM N-Channel POWER MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SPD830SMS SPD805SMS SPD810SMS SPD820SMS |
8 AMPS 50 - 300 VOLTS 40 nsec HYPER FAST RECTIFIER
|
Solid States Devices, I...
SSDI[Solid States Devices, Inc]
|
| SDR9105N SDR9103N |
100 AMP 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER 100 A, 300 V, SILICON, RECTIFIER DIODE, TO-258AA
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| 3N50L-TN3-R 3N50G-TN3-R 3N50G-TF3-T 3N50L-TF3-T 3N |
3 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 1N50 1N50L-TA3-T 1N50G-TA3-T |
1.3 Amps, 500 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| MTW14N50E-D |
Power MOSFET 14 Amps, 500 Volts N-Channel TO-247
|
ON Semiconductor
|
| SDR8300S8 SDR8300S10 SDR8300S12 SDR8300S4 SDR8300S |
300 AMPS 400 - 1200 VOLTS 15 usec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
