| PART |
Description |
Maker |
| SDR1ASMS SDR1MSMS RU0003H RU0003H-15 |
1.0 AMPS 50 - 1000 VOLTS 50 - 70 nsec ULTRA FAST RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE
1.0 AMPS 50 - 1000 VOLTS 50 - 70 nsec ULTRA FAST RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
Solid States Devices, Inc
Solid States Devices, I...
|
| SDR6M-TXV SDR6K-TX SDR6K-TXV SDR6K1 SDR6K-S |
6.0 AMPS 800 - 1000 VOLTS 90 nsec ULTRA FAST RECTIFIER
|
Solid States Devices, Inc
|
| SDR1004 SDR1010 SDR1008 SDR1006 |
100 amps ultra fast recovery rectifier 400-1000 volts
|
SSDI[Solid States Devices, Inc]
|
| SDA165GUF SDA165DUF SDA165EUF SDA165FUF |
10 AMPS 400 - 1000 VOLTS ULTRAFAST RECOVERY SINGLE PHASE BRIDGE
|
SSDI[Solid States Devices, Inc]
|
| SDR9600S20 SDR9600S10 SDR9600S15 |
600 AMPS 1000 - 2000 VOLTS 25 usec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| DB101S-DB107S |
Single Phase 1.0 AMPS. Glass Passivated Bridge Rectifiers Voltage Range 50 to 1000 Volts Current 1.0 Amperes
|
Kingtronics International Company
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| SPD4947SM |
1 AMPS 200-1000 VOLTS 150-200 nsec FAST RECOVERY RECTIFIER
|
Solid States Devices, I...
|
| NTB45N06 NTB45N06T4 NTP45N06 NTP45N06_D NTP45N06D |
Power MOSFET 45 Amps, 60 Volts N?Channel TO?20 and D2PAK
Power MOSFET 45 Amps / 60 Volts
Power MOSFET 45 Amps, 60 Volts N-Channel TO-220 and D2PAK
Power MOSFET 45 Amps, 60 Volts 功率MOSFET四十五安培，60伏特
|
ONSEMI[ON Semiconductor]
|
| NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package
Receptacle With A Standard Tail
Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
