| PART |
Description |
Maker |
| AM52-0001TR AM52-0001 AM52-0001SMB |
1.2 W High Efficiency Power Amplifier 800 - 960 MHz
|
MACOM[Tyco Electronics]
|
| MPS-0810A9D-82 |
800 MHz - 960 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MicroWave Technology, Inc.
|
| PE15A5040 |
6 Watt P1dB, 800 MHz to 960 MHz, High Power Amplifier, 30 dB Gain, 50 dBm IP3, 3 dB NF, SMA
|
Pasternack Enterprises,...
|
| HMC581LP6 HMC581LP6E |
HIGH IP3 RFIC DUAL DOWNCONVERTER, 800 - 960 MHz
|
Hittite Microwave Corporation
|
| JTDA50 |
RF Power Transistors: AVIONICS
High power COMMON BASE bipolar transistor.
50 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz
|
Advanced Power Technology
GHz Technology
GHZTECH
ETC
List of Unclassifed Manufacturers
|
| 1004MP |
RF Power Transistors: AVIONICS
4 Watts, 35 Volts Pulsed Avionics, 960 to 1215 MHz
|
ADPOW[Advanced Power Technology]
|
| TAN350 |
350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦，50伏特，脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
|
Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
|
| MTB4N80E_D ON2428 ON2426 MTB4N80E |
TMOS POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| SD1495-3 |
RF & MICROWAVE TRANSISTORS 900-960 MHz CLASS C BASE STATIONS
|
Microsemi Corporation
|
| SD1496-3 RF621 |
RF & MICROWAVE TRANSISTORS 900-960 MHz CLASS C BASE STATIONS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
