| PART |
Description |
Maker |
| MS8150-P2613 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
MICROSEMI CORP-LOWELL
|
| HSCH-9201TC494 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
AGILENT TECHNOLOGIES INC
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| DGB9335 DGB9344 DGB9345 DGB8544 DGB8514 DGB8164 DG |
12.4 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
18 GHz - 26.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
5 GHz - 8.2 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
40 GHz - 60 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
8.2 GHz - 12.4 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
SKYWORKS SOLUTIONS INC
|
| DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MGRB2025CT MGRB2025CT_D ON1884 |
From old datasheet system
GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS
Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| GN01019B |
Gallium Arsenide Devices
|
Panasonic
|
| OH10015 |
Gallium Arsenide Devices
|
Panasonic
|
