| PART |
Description |
Maker |
| SB200-09R |
90V/ 20A Rectifier
90V, 20A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| MBR2090CTLFAJ |
20A 90V Schottky Rectifier
|
ON Semiconductor
|
| SB005-09SPA SB005-09CPA |
90V, 50mA Rectifier(重复反向电压-90V，平均整流电0mA 整流
Schottky Barrier Diode
Shottky barrier diode, 90V/50mA rectifier
90V/ 50mA Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
| SB02-09C |
90V, 200mA Rectifier
|
Sanyo Semicon Device
|
| MBR1090 |
10A 90V Schottky Rectifier
|
ON Semiconductor
|
| SBA50-09Y |
90V, 5A Rectifier(用于高频整流应用的重复反向电0V，平均整流电5A 整流
|
Sanyo Electric Co.,Ltd.
|
| 164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16
晶体管|晶体管|叩| 160V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 120伏特五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五（巴西）总裁|甲一（c）| STR-5/16
|
Ecliptek, Corp.
|
| SBA50-09Y |
Schottky Barrier Diode (Twin Type Cathode Common) 90V, 5A Rectifier
|
Sanyo Semicon Device
|
| SB250-09R |
90V, 25A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB
XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
