| PART |
Description |
Maker |
| SB50-18K |
180V, 5A Rectifier(高频整流应用的重复反向电80V,平均整流电A 整流 180VA条整流器(高频整流应用的重复反向电压180V,平均整流电A条整流器 180V/ 5A Rectifier Schottky Barrier Diode (Twin Type Cathode Common) 180V, 5A Rectifier
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
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| SB50-18 |
180V, 5A Rectifier(高频整流应用的重复反向电80V,平均整流电A 整流 180V/ 5A Rectifier Schottky Barrier Diode (Twin Type Cathode Common) 180V, 5A Rectifier
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
| FCX555TA |
180V High voltage PNP switching transistor in SOT89
|
Diodes Incorporated
|
| 58-27 |
Token Ring Switch, 4Mbps|16Mbps, Copper, 90V|130V|180V|250V (AC), Module
|
Madge Networks
|
| DGS20-015A DGS20-018A |
150V gallium arsenide schottky rectifier 180V gallium arsenide schottky rectifier
|
IXYS
|
| G8522-02 G8522 G8522-01 G8522-03 |
Aluminum Snap-In Capacitor; Capacitance: 100uF; Voltage: 420V; Case Size: 20x30 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 180V; Case Size: 25x40 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 120uF; Voltage: 420V; Case Size: 25x25 mm; Packaging: Bulk Aluminum Snap-In Capacitor; Capacitance: 560uF; Voltage: 180V; Case Size: 22x30 mm; Packaging: Bulk GaAs PIN photodiode
|
Hamamatsu Photonics HAMAMATSU[Hamamatsu Corporation]
|
| 2N5551 |
Switching and amplification in high voltage High voltage(max.180V)
|
TY Semiconductor Co., L...
|
| 2SC2230 2SC2230A 2SC2230AGR |
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 100MA I(C) | TO-92VAR Transistor Silicon NPN Triple Diffused Type (PCT Process) HIGH VOLTAGE GENERAL AMPLIFIER AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS
|
TOSHIBA
|
| CIL2230 CIL2230A CIL2230AGR CIL2230AY CIL2230GR CI |
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 400 hFE 0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 400 hFE 0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 200 - 400 hFE 0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 240 hFE 0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 200 - 400 hFE 0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 240 hFE
|
Continental Device India Limited
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 180V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁| 6A条一c)|2 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五(巴西)总裁|甲一(c)| STR-5/16
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Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
|
| CPD0410 |
General Purpose Rectifier 500mA Glass Passivated Rectifier Chip
|
Central Semiconductor Corp
|