| PART |
Description |
Maker |
| BFP62010 |
NPN Silicon Germanium RF Transistor
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| NESG3033M14 NESG3033M14-A NESG3033M14-T3 NESG3033M |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
California Eastern Labs
|
| BFP620 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BFP740F |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFR740L3 |
NPN Silicon Germanium RF Transistor
|
INFINEON[Infineon Technologies AG]
|
| BFP690E6327 |
NPN Silicon Germanium RF Transistor
|
Infineon
|
| NESG260234-T1 NESG260234 NESG260234-T1-AZ |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell
CEL[California Eastern Labs]
|
| BFU710F |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFP620FE7764 |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| RQG1003UQAQF RQG1003UQ-TL-E |
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION)
75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics
ETC[ETC]
|
| ON5088 ON5088-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
