| PART |
Description |
Maker |
| RF3863PCK-410 RF3863PCK-411 RF3863PCK-412 RF3863 |
WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER
|
RF Micro Devices
|
| ADXL001-250BEZ ADXL001-250BEZ-R7 ADXL001-70BEZ-R7 |
High Performance Wide Bandwidth iMEMS? Accelerometer
SPECIALTY ANALOG CIRCUIT, CQCC8
High Performance, Wide Bandwidth Accelerometer
|
ANALOG DEVICES INC
|
| K4H510738E-TC/LAA K4H510738E-TC/LB0 K4H510738E-TC/ |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 堆叠12Mb电子芯片DDR SDRAM内存规格（x4/x8
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| PE84140_06 84140-00 84140-01 84140-02 PE84140 PE84 |
Ultra-High Linearity Broadband Quad MOSFET Array 0 MHz - RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array
|
Peregrine Semiconductor, Corp.
PEREGRINE[Peregrine Semiconductor Corp.]
|
| MC33071AD MC33071ADR2 MC33071AP MC33071D MC33071DR |
High Slew Rate, Wide Bandwidth, Single Supply Operational Amplifiers
HLGH SLEW RATE, WIDE BANDWIDTH, SINGLE SUPPLY OPERATIONAL AMPLIFIERS
High Slew Rate Wide Bandwidth Single Supply Operational Amplifiers
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| 1N1190 JANTXV1N3768R 1N1184 1N1184R 1N1186 1N1186R |
Standard Rectifier (trr more than 500ns)
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-SOIC -40 to 125 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
Military Silicon Power Rectifier 35 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AB
Single Wide-Bandwidth High-Output Drive Single-Supply Op Amp With Shutdown 8-SOIC 0 to 70 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 16-PDIP -40 to 125 35 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
Quad Wide-Bandwidth High-Output-Drive Op Amp w/Shutdown 20-HTSSOP -40 to 125 35 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
|
http://
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
|
| AS185-92 |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| MSK600 |
WIDE BANDWIDTH HIGH VOLTAGE AMPLIFIER
|
M.S. Kennedy Corporation
|
| EPD-150-0 |
Wide bandwidth and high spectral sensitivity in the UV and visible ranges
|
Roithner LaserTechnik G...
|
| MC34074L-D14-T MC34074L-S14-R MC34074G-S14-R MC340 |
HIGH SLEW RATE, WIDE BANDWIDTH, SINGLE SUPPLY OPERATIONAL AMPLIFIER
|
Unisonic Technologies
|
| TQP3M9006-PCB |
High Linearity LNA Gain Block
500 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TRIQUINT SEMICONDUCTOR INC
|
| AGB3306S24Q1 AGB3306 AGB3306_REV_1.2 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
50W High Linearity Low Noise Wideband Gain Block
From old datasheet system
Gain Block Amplifiers
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
