| PART |
Description |
Maker |
| MRFIC1859 |
Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功
|
Motorola, Inc.
|
| CGY2014TT |
GSM/DCS/PCS power amplifier(GSM/DCS/PCS 功率放大
|
Philips Semiconductors
|
| RF5110 RF5110PCBA |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| ITT2110AH |
3.5V 3.3W RF Power Amplifier IC for GSM
|
M/A-COM / Tyco Electronics
|
| RF2138PCBA RF2138 |
3V GSM POWER AMPLIFIER 3V的的GSM功率放大
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| MRFIC0970 |
From old datasheet system
3.2V GSM GaAs Integrated Power Amplifier
|
Motorola
|
| TQM7M5005 |
GSM/EDGE Multi-mode Power Amplifier Module
|
TriQuint Semiconductor
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| TQM7M5002 |
Quad-Band GSM/EDGE Polar Power Amplifier Module
|
TriQuint Semiconductor
|
| PF01410 PF01410A |
MOS FET Power Amplifier Module for GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
| PCF5079 PCF5079HK PCF5079T |
Dual-band power amplifier controller for GSM, PCN and DCS
|
NXP Semiconductors
|
| PF0121 |
MOS FET Power Amplifier Module for GSM Mobile Phone
|
Hitachi Semiconductor
|
