PART |
Description |
Maker |
ML40123N |
AIGaAs LASER DIODES
|
Mitsubishi Electric Corporation
|
QEE122 QEE123 |
AIGAAS INFRARED EMITTING DIODE
|
QT Optoelectronics
|
MCT5200 MCT5201 |
HIGH-PERFORMANCE AIGAAS PHOTOTRANSISTOR OPTOCOUPLERS
|
QT[QT Optoelectronics]
|
SHF-0198 |
DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET
|
STANFORD[Stanford Microdevices]
|
MAN6060 MAN6080 MAN8040 MAN3010A MAN3020A MAN3040A |
DOUBLE HETEROJUNCTION AIGAAS RED LOW CURRENT DISPLAYS
|
QT[QT Optoelectronics]
|
ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管 1557 nm, LASER DIODE 1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon... Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SLD323V SLD323V-21 SLD323V-24 |
807 nm, LASER DIODE 798 nm, LASER DIODE High Power Density 1W Laser Diode
|
SONY
|
NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
NX7537BF-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
NX8346TB |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|