| PART |
Description |
Maker |
| BBY51-03W BBY5103W Q62702-B663 |
ER 9C 6#16 3#12 PIN RECP BOX
Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY57 BBY57-02L BBY57-02V BBY57-05W BBY57-02W |
Varactordiodes - Silicon high Q hyperabrupt tuning diode in ultra small SC79 package
Silicon Tuning Diode
|
INFINEON[Infineon Technologies AG]
|
| BBY51-02W Q62702-B0858 BBY5102W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管（高Q hyperabrupt调谐二极管低串联电感
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BBY56-03W |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| BB112 Q62702-B240 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8.0 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
| MMVL409T1G MMVL409T106 MMVL409T1 |
Silicon Tuning Diode(调谐二极 VHF BAND, 29 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE
|
ONSEMI[ON Semiconductor]
|
| BBY5907 BBY59-02V |
27.8 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SC-79, 2 PIN
Silicon Tuning Diode
|
EUPEC GMBH ?CO KG
Infineon Technologies AG
Infineon Technologies A...
|
| SFH2030F SFH2030 SFH203FA Q62702-P955 Q62702-P956 |
From old datasheet system
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silizium Fotodiode麻省理工sehr库泽Schaltzeit Silizium Fotodiode麻省理工Tageslichtsperrfilter
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| KDV287 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)
|
KEC[KEC(Korea Electronics)]
|
