| PART |
Description |
Maker |
| PTF10045 |
30 Watts, 1.60.65 GHz GOLDMOS Field Effect Transistor
30 Watts 1.60-1.65 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10111 |
6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor
6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10065 |
30 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.93.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10153 |
60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor
60 Watts, 1.8.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| PTF10160 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦，860-960兆赫GOLDMOS场效应晶体管
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10193 |
12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor
12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PE6818 |
40 Watts Medium Power WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
| NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
|
MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
|
| PH1214-40M |
Radar Pulsed Power Transistor - 40 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Radar Pulsed Power Transistor - 40 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 401.20 - 1 .40千兆赫，150毫秒脉冲0％的
|
Ecliptek, Corp.
MACOM[Tyco Electronics]
|
| PH1214-110M |
Radar Pulsed Power Transistor - 110 Watts/1.20-1.40 GHz/ 150ms Pulse/ 10% Duty
Radar Pulsed Power Transistor - 110 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty 雷达脉冲功率晶体 110瓦特,1.20 - 1 .40千兆赫，150毫秒脉冲10％的
|
Vishay Intertechnology, Inc.
MACOM[Tyco Electronics]
|
