| PART |
Description |
Maker |
| PD839C4 |
InGaAs AVALANCHE PHOTO DIODES
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PD739C13 |
InGaAs PIN PHOTO DIODES
|
Mitsubishi Electric Semiconductor
|
| FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
|
Fujitsu, Ltd.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| LX3051 |
InGaAs/InP PIN Photo Detectors
|
Microsemi
|
| LX3055 |
Coplanar InGaAs/InP PIN photo diode.
|
Microsemi
|
| ML920B6S |
InGaAs MQW - FP LASER DIODES
|
Mitsubishi Electric Corporation
|
| G894104 G8941-02 |
PIN PHOTO DIODE
InGaAs PIN photodiode
|
Hamamatsu Corporation
|
| ML8XX2SERIES |
InGaAs - MQW HIGH POWER LASER DIODES
|
Mitsubishi Electric Corporation
|
| NDL5461P_00 NDL5461P NDL5461P1 NDL5461P1C NDL5461P |
1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 80 um InGaAs PIN PHOTO DIODE MODULE
|
CEL[California Eastern Labs]
|
| R2KS |
Avalanche Diodes
|
Shenzhen Luguang Electronic Technology Co., Ltd
Shenzhen Luguang Electr...
|
