| PART |
Description |
Maker |
| PC50F6 |
FRD MODULE 50A/600V/trr:100nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| PC50F2 PD50F2 |
FRD MODULE 50A/200Vtrr:80nsec
50A Avg 200 Volts
|
NIEC[Nihon Inter Electronics Corporation]
|
| FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| PD50F4 |
FRD MODULE - 50A/400V/trr:80nsec
|
NIEC[Nihon Inter Electronics Corporation]
|
| PBMB50A6 |
IGBT MODULE H_Bridge 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| 6MBP50VAA060-50 |
IGBT MODULE (V series) 600V / 50A / IPM
|
Fuji Electric
|
| 6MBP50VBA060-50 |
IGBT MODULE (V series) 600V / 50A / IPM
|
Fuji Electric
|
| X40030S14-A X40030S14-B X40031S14-A X40031S14-B X4 |
THYRISTOR/DIODE MODULE, 50A 1400VTHYRISTOR/DIODE MODULE, 50A 1400V; Voltage, Vrrm:1400V; Current, It av:50A; Case style:SEMIPACK 1; Current, It rms:95A; Current, Itsm:1500A; Voltage, Vgt:3V; Current, Igt:150mA; Centres, fixing:80mm;
Triple Voltage Monitor with Intergrated CPU Supervisor
|
Intersil Corporation
|
| RHRU5060 RHRU5050 FN3919 RHRU5040 |
50A, 400V - 600V Hyperfast Diodes
50A 400V - 600V Hyperfast Diodes
From old datasheet system
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| STGY40NC60VD STGY40NC60V |
N-CHANNEL 50A - 600V MAX247 VERY FAST POWERMESH" IGBT
N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT
Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| 7MBR50NF060 |
600V/50A/PIM
|
FUJI[Fuji Electric]
|
