| PART |
Description |
Maker |
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q68000-A7851 IRL80A IRL80 |
GaAs-Infrarot-Sendediode GaAs Infrared Emitter
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH402-3 Q62702-P96 SFH401 Q62702-P784 Q62702-P786 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
From old datasheet system
|
Siemens Semiconductor G...
http://
SIEMENS[Siemens Semiconductor Group]
红外LED
|
| OPE5594A |
GaAs Infrared Emitter
|
List of Unclassifed Manufacturers
ETC
|
| OPE5194 |
GaAs Infrared Emitter
|
List of Unclassifed Manufacturers
ETC
|
| TLN11707 TLN117F |
INFRARED LED GAAS INFRAED EMITTER 红外发光二极管公认审INFRAED发射
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| MTE108CL-J |
Infrared Emitter
5mm Metal Can IR Emitter
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| TLN233 |
TOSHIBA Infrared LED GaALAs Infrared Emitter
|
TOREX SEMICONDUCTOR LTD.
Toshiba Semiconductor
|
| MIE-134G2 134G2 |
Infrared Emitting Diodes (IRED)
GaAs/GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LD274 |
GaAs Infrared Emitter
|
OSRAM GmbH
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
