| PART |
Description |
Maker |
| NX5501EK-AZ NX5501 NX5501EH-AZ |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
CEL[California Eastern Labs]
|
| NX7527BF-AA-AZ NX7527BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (120 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7527BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (120 mW MIN)
|
http://
California Eastern Laboratories
|
| NX8303CG-CC NX8303BG-CC NX8303BG |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
NECs 1310 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 622 Mb/s APPLICATION
|
CEL[California Eastern Labs]
http://
|
| NX8510UD61 NX8510UD51 NX8510UD53 NX8510UD55 NX8510 |
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1610 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1510 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1530 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1550 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1570 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1590 nm.
|
NEC
|
| NX5304 NX5304EK NX5304EH |
NECs 1310 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s AND 1.25 Gb/s APPLICATIONS
|
California Eastern Labs
NEC[NEC]
NEC Corp.
|
| NX8563LF358-BA NX8563LF318-BA NX8563LB413-BA NX856 |
NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS (10 mW MIN)
|
CEL[California Eastern Labs]
|
| NX8508CG61-CC-AZ NX8508 NX8508BM47-CC NX8508BM47-C |
NECs InGaAsP MQW-DFB LASER MODULE IN COAXIAL PACKAGE FOR 2.5 Gb/s, CWDM APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX5310 NX5310EH-AZ NX5310EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
|
California Eastern Laboratories
|
| NX7315UA-AZ |
NECs 1310 nm InGaAsP MQW FP TOSA FOR 2.5 Gb/s INTRA-OFFICE APPLICATION 邻舍1310纳米InGaAsP多量子阱计划生育TOSA.5千兆/ s的内部办公应
|
California Eastern Laboratories, Inc.
|
| NX7661JB-BC-AZ NX7661JB-BC |
NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7361JB-BC-AZ NX7361JB-BC |
NECs 1310 nm InGaAsP MQW FP PULSD LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (150 mW MIN)
|
CEL[California Eastern Labs]
|
