| PART |
Description |
Maker |
| NX6309GH NX6309GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX5313 |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
California Eastern Laboratories
|
| NX5315EH-AZ NX5315EK-AZ NX5315 |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX5321EH NX5321EK NX5321 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
NEC
|
| NX5310EK-AZ NX5310 NX5310EH-AZ NX531006 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX5501 NX5501EH-AZ NX5501EK-AZ |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
California Eastern Laboratories
|
| NX5504EK-AZ NX5504EH-AZ NX5504 |
NECs 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION
|
CEL[California Eastern Labs]
|
| PAS5351 PAS5361 |
Gigabit Ethernet PON Burst Receiver
|
PMC-Sierra
|
| G8931-04-15 |
Time response characteristics compatible with SONET and G/GE-PON
|
Hamamatsu Corporation
|
| DS1886T |
SFP and PON ONU Controller with Digital LDD Interface
|
MAXIM - Dallas Semiconductor
|
| BT-2442CS |
10G E-PON Asymmetrical OLT Tri-direction OSA
|
AVAGO TECHNOLOGIES LIMI...
|
| C380SX500 C380AX500 C380BX500 C380CX500 C380DX500 |
Phase Control SCR 310 Amperes Avg 800 Volts
Phase Control SCR 310 Amperes Avg 1600 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
