| PART |
Description |
Maker |
| BAS31 |
0.25 A, 110 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB
Dual In-Series General-Purpose Controlled-Avalanche Diode
|
VISHAY SEMICONDUCTORS
|
| V07 V07E |
CONTROLLED AVALANCHE DIODE
|
Hitachi
|
| 25FXFF12 |
Controlled Avalanche Rectifier
|
Toshiba
|
| U17 |
Controlled Avalanche Diode
|
Hitachi
|
| BAX12A |
CONTROLLED AVALANCHE DIODES
|
SUNMATE electronic Co.,...
|
| BAX12 |
Controlled avalanche diode
|
New Jersey Semi-Conductor P...
|
| 1N5059 1N5061 |
Controlled avalanche rectifiers
|
NXP
|
| BYD13D BYD13K BYD13G BYD13J BYD13M |
CONTROLLED AVALANCHE RECTIFIER DIODES
|
EIC discrete Semiconductors
|
| S1 S1D |
SMA controlled avalanche rectifiers
|
NXP
|
| BY627 |
Controlled Avalanche Rectifier Diodes
|
Philips
|
| 1N5062 1N5059 1N5059_1 1N5060 1N5061 |
From old datasheet system
Controlled avalanche rectifiers
|
Philips
|
| BAS29 BAS31 BAS35 |
General purpose controlled avalanche (double) diodes
|
NXP Semiconductors
|
