PART |
Description |
Maker |
VSKH250-08PBF VSKL250-16 SKT250-04PBF SKT250-08PBF |
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 Silicon Controlled Rectifier, 555 A, 1600 V, SCR, MAGN-A-PAK-5 Silicon Controlled Rectifier, 555 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 555 A, 1000 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7 Silicon Controlled Rectifier, 377 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 Silicon Controlled Rectifier, 377 A, 1200 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5 SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
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Vishay Semiconductors Vishay Siliconix
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NTE5513 NTE5511 NTE5512 |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A. Silicon Controlled Rectifier (SCR) 5 Amp
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NTE[NTE Electronics]
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S4060 S4060M S4060D S4060U |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 25V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 400V. 10A sensitive-gate silicon controlled rectifier. Vrrxm, 600V. 10 AMPERE SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
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General Electric Solid State ETC[ETC]
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2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase) Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
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Microsemi Corporation Microsemi, Corp.
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CS48-35N CS48-35D CS48-35M CS48-35P CS48-35PB CS48 |
SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 800 V, SCR, TO-48 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 600 V, SCR, TO-48 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 200 V, SCR, TO-48 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1200 V, SCR, TO-48 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 1000 V, SCR, TO-48 SILICON CONTROLLED RECTIFIER 35 AMP, 200 THRU 1200 VOLTS 35 A, 400 V, SCR, TO-48
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Central Semiconductor Corp. Central Semiconductor, Corp.
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ST280CH06C0 ST280CH04C1 |
Silicon Controlled Rectifier, 1130 A, 400 V, SCR, TO-200AB, EPUK-2 Silicon Controlled Rectifier, 1130 A, 600 V, SCR, TO-200AB, EPUK-2 600V 500A Phase Control SCR in a TO-200AA (A-Puk) package
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Vishay Semiconductors International Rectifier
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BYV28-50 BYV28-600 BYV28 BYV28-500 BYV28-100 BYV28 |
From old datasheet system Ultra fast low-loss controlled avalanche rectifiers 1.9 A, 50 V, SILICON, RECTIFIER DIODE Ultra fast low-loss controlled avalanche rectifier(超快速低损耗控制的雪崩整流 1.9 A, 200 V, SILICON, RECTIFIER DIODE
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage Silicon Controlled Rectifiers
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SemiWell Semiconductor
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BY527 BY527_1 |
Controlled avalanche rectifier(控制的雪崩整流器) SILICON, RECTIFIER DIODE From old datasheet system
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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2N689A 2N684A 2N686A 2N684 2N691 2N683 2N688 2N692 |
SILICON CONTROLLED RECTIFIER 25 AMPS, 25 THRU 800 VOLTS 25 A, 150 V, SCR, TO-48 SILICON CONTROLLED RECTIFIER 25 AMPS 25 THRU 800 VOLTS Leaded Thyristor SCR
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Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp] Central Semiconductor C...
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MCR100-8G MCR100-4G MCR100-004G |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors 0.8 A, 200 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifier; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000
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On Semiconductor
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BYV27-600 BYV27 BYV27-100 BYV27-150 BYV27-200 BYV2 |
Ultra fast low-loss controlled avalanche rectifiers 1.25 A, 300 V, SILICON, RECTIFIER DIODE 1/2" NPT Bracket; Style: Bracket; Applicable Model: LU7 / LHE-A 1.3 A, 100 V, SILICON, RECTIFIER DIODE From old datasheet system
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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