| PART |
Description |
Maker |
| 2SC5045 |
15 A, 800 V, NPN, Si, POWER TRANSISTOR
|
|
| KSC5803 |
12 A, 800 V, NPN, Si, POWER TRANSISTOR
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 2SC5297 |
8 A, 800 V, NPN, Si, POWER TRANSISTOR
|
|
| KSD5703ATBTU |
10 A, 800 V, NPN, Si, POWER TRANSISTOR
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FJI5603D FJI5603DTU |
NPN Silicon Transistor; Package: TO-262(I2PAK); No of Pins: 3; Container: Rail 3 A, 800 V, NPN, Si, POWER TRANSISTOR
|
Fairchild Semiconductor, Corp.
|
| NTE2365 |
12 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN Transistor High Voltage Horizontal Deflection Output
|
NTE[NTE Electronics]
|
| 2SD414 2SD415 2SB548 2SB549 2SD414Q 2SD414Q-AZ |
800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
(2SB548) PNP/NPN Silicon Epitaxial Transistor
|
NEC[NEC]
|
| STB18NM80 STF18NM80 STP18NM80 STW18NM80 |
N-channel 800 V, 0.25 Ω, 17 A, MDmes Power MOSFET
N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
|
STMicroelectronics
|
| MDS800 |
RF Power Transistors: AVIONICS
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 800; P(in) (W): 110; Gain (dB): 8.5; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technology
Microsemi, Corp.
|
|
