| PART |
Description |
Maker |
| AF109R Q60106-X109-R1 |
PNP GERMANIUM RF TRANSISTOR
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
| AF239 Q60106-X239 |
PNP GERMANIUM RF TRANSISTOR 进步党锗射频晶体
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
| AF379 Q62701-F72 |
PNP GERMANIUM RF TRANSISTOR 进步党锗射频晶体
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
| 2SB555 2SB556 |
SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR
|
Unknow ETC
|
| AF239S Q62701-F51 SIEMENSAG-Q62701-F51 |
LJT 41C 41#16 SKT WALL RECP PNP GERMANIUM RF TRANSISTOR
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
| 2SA740 |
From old datasheet system SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC Unknow
|
| OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5 68HC11/Bidirectional-Compatible µP Reset Circuit TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五(巴西)总裁| 500mA的一(c)|
|
APEM SA
|
| NTE28 |
Germanium PNP Transistor High Current, High Gain Amplifier
|
NTE[NTE Electronics]
|
| NTE213 |
Germanium PNP Transistor High Power, High Gain Amplifier
|
NTE[NTE Electronics]
|
| 1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
| 2N1122 2N1405 2N1407 2N1101 2N1140 2N1535 2N1472 2 |
TRANSISTOR | BJT | PNP | 11V V(BR)CEO | 50MA I(C) | TO-24 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-12 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-22 TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-9 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 3.5A I(C) | IST-3RT-1/2 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50A I(C) | TO-36 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 7.5A I(C) | TO-82 TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 7.5A I(C) | TO-82 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-3 TRANSISTOR | BJT | PNP | 110V V(BR)CEO | TO-5 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-5 TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 25MA I(C) | TO-22VAR TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 25A I(C) | TO-36 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 90V V(BR)CEO | 5A I(C) | TO-3 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 7A I(C) | TO-3 晶体管|晶体管|进步党| 50V五(巴西)总裁| 7A条一(c)| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 12V的五(巴西)总裁| 100mA的一(c)| 5-Pin, Multiple-Input, Programmable Reset ICs 晶体管|晶体管|进步党| 65V的五(巴西)总裁|5A一(c)|6 TRANSISTOR | BJT | PNP | 15A I(C) | TO-36 TRANSISTOR | BJT | PNP | 38V V(BR)CEO | 15A I(C) | TO-41
|
NXP Semiconductors N.V. Microsemi, Corp.
|
| BFP62010 |
NPN Silicon Germanium RF Transistor C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG Infineon Technologies A...
|