| PART |
Description |
Maker |
| NNCD6.8RH NNCD6.8RH-T1 NNCD6.8RH-T2 |
ESD noise clipping diode 5pin SC-88A low capacitance
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE (QUARTO TYPE: COMMON ANODE) 5-PIN SUPER SMALL MINI MOLD 低电容式静电放电噪声裁剪二极管（四开型：共阳极）5引脚超小微型模具
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| NNCD6.2MF NNCD6.2MF-T1 NNCD6.2MF-T2 |
ESD noise clipping diode 3pin SC-59 Low capacitance,Hi ESD type
LOW CAPACITANCE HIGH ESD TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES DUAL TYPE: COMMON ANODE 3-PIN MINI MOLD
低电容高ESD静电放电噪音型裁剪二极管双类型：通用阳极3针微型模
|
NEC Corp.
|
| NNCD5.6H |
Noise clipping diode for ESD noise protection
|
NEC
|
| NNCD5.1A NNCD5.6A NNCD6.2A NNCD6.8A NNCD4.3A NNCD4 |
100 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-34
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 400 mW TYPE 静电放电噪声裁剪二极00毫瓦
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| HSMS-2700 |
High Power Clipping/clamping Diode
|
AGILENT TECHNOLOGIES
|
| YG838C03R |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 4.0 to 4.4; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
SCHOTTKY BARRIER DIODE
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| CPDU24V0U-HF |
Halogen Free ESD Diodes, V-C=50V, V-ESD=15kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDQR5V0C-HF |
Halogen Free ESD Diodes, V-C=15V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDER24V0U-HF |
Halogen Free ESD Diodes, V-C=50V, V-ESD=8kV
SMD ESD Protection Diode
|
Comchip Technology
|
| CPDF12V0U-HF |
Halogen Free ESD Diodes, V-C=24V, V-ESD=30kV
SMD ESD Protection Diode
|
Comchip Technology
|
| TAR5S16 TAR5S19 TAR5S24 |
Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 2.2 to 2.6; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 3.1 to 3.5; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: Low noise; Pd (mW): 150; Vz (V): 4.6 to 5.0; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
|
Toshiba Corporation
|
| SSM6P25TU |
Zener Diode; Application: Low noise; Pd (mW): 250; Vz (V): 2.5 to 2.9; Condition Iz at Vz (mA): 0.5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
High Speed Switching Applications
|
Toshiba Corporation
Toshiba Semiconductor
|
