| PART |
Description |
Maker |
| NE851M03 NE851M03-T1-A |
NECs NPN SILICON TRANSISTOR
|
California Eastern Labs
|
| NE685M33-T3-A |
NECs NPN SILICON TRANSISTOR
|
Duracell
California Eastern Laboratories
|
| NE685M13 NE685M13-T3 |
NECs NPN SILICON TRANSISTOR
|
Electronic Theatre Controls, Inc.
California Eastern Laboratories
|
| UPA861TD-T3 UPA861TD |
NECs NPN SILICON RF TWIN TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| NE68019-T1 NE68000 NE68030-T1 NE68035 NE68033-T1B |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR 邻舍NPN硅高频晶体管
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE58219 NE58219-T1 |
NECs NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
|
NEC[NEC]
|
| NESG204619 NESG204619-T1-A NESG204619-A |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| NESG250134-AZ NESG250134-EV09 NESG250134-T1-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE) 邻舍npn型硅锗射频晶体管介质输出功率AMPLIFIVATION00mW的）3针奥尔MINIMOLD34包）
|
Duracell
California Eastern Laboratories, Inc.
|
| 2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
