PART |
Description |
Maker |
NE52418 NE52418-T1-A NE52418-A |
NECs L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
|
California Eastern Laboratories Duracell California Eastern Labs
|
NE3503M04 NE3503M04-A NE3503M04-T2-A |
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET
|
CEL California Eastern Labs
|
NESG210719 NESG210719-T1 |
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
|
NEC[NEC]
|
SBFP540M |
Ultrahigh-Frequency Transistors UHF to C Band Low Noise Amplifier, Low Phase Noise Oscillation Applications
|
Sanyo Semicon Device
|
SBFP420M |
UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications
|
SANYO[Sanyo Semicon Device]
|
2SC4320 E000939 |
From old datasheet system VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
EC3H06B |
UHF to S Band Low-Noise Amplifier and OSC Applications 超高频的S波段低噪声放大器和OSC应用 NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications
|
Sanyo Electric Co., Ltd. Sanyo Semicon Device
|
EC3H02B |
VHF to UHF Low-Noise Wide-Band Amplifier Applications 甚高频到超高频低噪声宽带放大器应 NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
Sanyo Electric Co., Ltd. Sanyo Semicon Device
|
NE3210S01 NE3210S01-T1 NE3210S01-T1B |
Low Noise Amplifier N-Channel HJ-FET(低噪声N沟道结型场效应管) 低噪声放大器N沟道黄建忠场效应管(低噪沟道结型场效应管 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
|
NEC, Corp. NEC Corp. NEC[NEC]
|
LT1128AMJ8 LT1028MJ8 LT1128MJ8 LT1028CJ8 LT1028ACJ |
Octal Buffers/Line Drivers with 3-State Outputs 20-SSOP 0 to 70 Ultra Low Noise Precision High Speed Op Amps OP-AMP, 180 uV OFFSET-MAX, 75 MHz BAND WIDTH, CDIP8 Ultra Low Noise Precision High Speed Op Amps OP-AMP, 180 uV OFFSET-MAX, 20 MHz BAND WIDTH, CDIP8 Ultra Low Noise Precision High Speed Op Amps OP-AMP, 125 uV OFFSET-MAX, 75 MHz BAND WIDTH, CDIP8 JT 15C 14#20 1#16 SKT WALL REC OP-AMP, 80 uV OFFSET-MAX, 75 MHz BAND WIDTH, CDIP8
|
Linear Technology Corporation Linear Technology, Corp.
|
NE6510179A-A NE6510179A-T1 |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
|
Duracell California Eastern Laboratories
|
NE552R479A-T1A-A NE552R479A |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
|
CEL[California Eastern Labs]
|