| PART |
Description |
Maker |
| MX29F016TI-90 MX29F016TI-12 29F016-12 29F016-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
http://
Macronix International
|
| 29F040C-70 29F040C-90 29F040C-55 MX29F040CQI-70G M |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 4分位[12k × 8] CMOS单电5V只等于部门闪
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| MX29F040TC-55 MX29F040TC-12 MX29F040QC-90 MX29F040 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29LV033A MX29LV033ATC-70 MX29LV033ATC-70G MX29LV |
32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
ETC
|
| MX29LV065XBC-90 MX29LV065XBI-90 MX29LV065TC-90 MX2 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 120 ns, PDSO48
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
http://
|
| MBM29DL161BE MBM29DL161TE MBM29DL161BE-70 MBM29DL1 |
16M (2MX8/1MX16) BIT Dual Operation
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation
|
Fujitsu Microelectronics
|
| UPD4416004 UPD4416004G5-A17-9JF UPD4416004G5-A15-9 |
16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
|
NEC Corp.
NEC[NEC]
|
| HYB3165400ATL-60 HYB3165400ATL-50 HYB3165400ATL-40 |
16M x 4 Bit 8k DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
|
Toshiba Semiconductor
|
